Characterization of C/Enhanced Sic Composite During Creep-Rupture Tests Using an Ultrasonic Guided Wave Scan System

An ultrasonic guided wave scan system was used to nondestructively monitor damage over time and position in a C/enhanced SiC sample that was creep tested to failure at 1200 C in air at a stress of 69 MPa (10 ksi). The use of the guided wave scan system for mapping evolving oxidation profiles (via porosity gradients resulting from oxidation) along the sample length and predicting failure location was explored. The creep-rupture tests were interrupted for ultrasonic evaluation every two hours until failure at approx. 17.5 cumulative hours. Roth, Don J. and Verrilli, Michael J. and Martin, Richard E. and Cosgriff, Laura M. Glenn Research Center NASA/TM-2004-213055, E-14333-1